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Same model may have multiple batches, images only for reference.
IPP027N08N5AKSA1
Same model may have multiple batches, images only for reference.

IPP027N08N5AKSA1

Part No IPP027N08N5AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 120A TO220-3
Datasheet
IPP027N08N5AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 154µA
Gate Charge (Qg) (Max) @ Vgs 123 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8970 pF @ 40 V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP027
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378633-IPP027N08N5AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP027N08N5AKSA1 CAD Model

Description

The Infineon Technologies IPP027N08N5AKSA1 is a single N-channel MOSFET transistor from the OptiMOS™ series.

  • Package: TO-220-3
  • Mounting Type: Through Hole
  • Temperature Range: -55°C to 175°C
  • Drain to Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id) @ 25°C: 120A
  • Drive Voltage for Maximum Rds On: 6V
  • Minimum Rds On: 10V
  • Rds On @ 100A, 10V: 2.7mOhm
  • Gate Charge (Qg) @ 10V: 123nC
  • Maximum Vgs: ±20V
  • Input Capacitance (Ciss) @ 40V: 8970pF
  • Power Dissipation @ 25°C: 214W
  • REACH: Unaffected
  • ECCN: EAR99

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41+ $2.8632 $117.3912
63+ $2.7736 $174.7368
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149+ $2.3263 $346.6187
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