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IPP030N10N3G

Part No IPP030N10N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 275μA
Max Gate Charge 206nC @ 10V
Max Input Capacitance 14800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 087158-IPP030N10N3G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IPP030N10N3
Introduction Date October 02, 2008
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IPP030N10N3G CAD Model

Description

The IPP030N10N3G is a N-Channel MOSFET from Infineon Technologies.

  • Mounting Technology: Through-hole
  • Case or Package: PG-TO-220-3
  • Family: IPP030N10N3
  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 3.5V @ 275μA
  • Maximum Gate Charge: 206nC @ 10V
  • Maximum Rds On @ Id, Vgs: 3 mOhm @ 100A, 10V
  • Supply and Demand Status: Limited
  • Estimated EOL date: 2024
  • ECCN: EAR99
  • Country of Origin: China, Malaysia

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.4315 $62.0410
32+ $3.6362 $116.3584
50+ $3.5225 $176.1250
68+ $3.4089 $231.8052
88+ $3.2954 $289.9952
118+ $2.9544 $348.6192
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,600 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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