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IPP034N03LG

Part No IPP034N03LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 15 V
Power Dissipation (Max) 94W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 710464-IPP034N03LG
Ultra Librarian 3D Model Ultra Librarian IPP034N03LG CAD Model

Description

The 710464-IPP034N03LG is a N-channel MOSFET transistor from the OptiMOS™ 3 series.

  • Manufacturer: Infineon Technologies
  • Vdss: 30V
  • Id: 80A @ 25°C
  • Rds On (Max): 3.4mOhm @ 30A and 10V
  • Qg: 51nC @ 10V
  • Ciss: 5300pF @ 15V
  • Vgs: ±20V
  • Operating Temperature: -55°C to 175°C
  • Power Dissipation: 94W
  • Package Type: TO-220-3
  • Mounting Type: Through Hole
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7356 $51.4920
170+ $0.6036 $102.6120
260+ $0.5847 $152.0220
355+ $0.5659 $200.8945
460+ $0.5470 $251.6200
615+ $0.4904 $301.5960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,974 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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