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Same model may have multiple batches, images only for reference.
IPP034N03LGHKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP034N03LGHKSA1

Part No IPP034N03LGHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO-220-3
Datasheet
IPP034N03LGHKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 25nC @ 4.5V
Max Input Capacitance 5300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 104576-IPP034N03LGHKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP034N03LGHKSA1 CAD Model

Description

The Infineon Technologies IPP034N03LGHKSA1 is a MOSFET device that has a maximum power dissipation of 94W (Tc) and a continuous drain current of 80A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 3.4 mOhm @ 30A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6402 $51.2160
195+ $0.5253 $102.4335
295+ $0.5089 $150.1255
410+ $0.4925 $201.9250
530+ $0.4761 $252.3330
705+ $0.4268 $300.8940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,260 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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