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IPP03N03LA

Part No IPP03N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 80A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 100μA
Max Gate Charge 57nC @ 5V
Max Input Capacitance 7027pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 55A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069028-IPP03N03LA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP03N03LA CAD Model

Description

The Infineon Technologies IPP03N03LA is a MOSFET Discrete Semiconductor Product that can be used for various applications.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current at 25°C: 80A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 100μA
  • Maximum Rds On at Id,Vgs: 3 mOhm @ 55A, 10V
  • Product Status: obsolete(EOL)
  • Popularity: medium
  • Supply and Demand Status: balance

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