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Same model may have multiple batches, images only for reference.
IPP057N06N3GHKSA1
Same model may have multiple batches, images only for reference.

IPP057N06N3GHKSA1

Part No IPP057N06N3GHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 60 V 80A (Tc) 115W (Tc) Through Hole PG-TO220-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mfr Infineon Technologies
Series OptiMOS™
Packaging Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 30 V
Power Dissipation (Max) 115W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP057M
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1480859-IPP057N06N3GHKSA1
Ultra Librarian 3D Model Ultra Librarian IPP057N06N3GHKSA1 CAD Model

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Availability: 500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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