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Same model may have multiple batches, images only for reference.
IPP070N08N3GXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP070N08N3GXKSA1

Part No IPP070N08N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 73A, 10V
Vgs(th) (Max) @ Id 3.5V @ 73µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3840 pF @ 40 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1065284-IPP070N08N3GXKSA1
Ultra Librarian 3D Model Ultra Librarian IPP070N08N3GXKSA1 CAD Model

Description

The Infineon Technologies 1065284-IPP070N08N3GXKSA1 is an N-Channel MOSFET transistor from the OptiMOS™ 3 series.

  • Series: OptiMOS™ 3
  • Drain to Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 80A
  • Rds On (Max): 7mOhm
  • Component: Through-hole
  • Package: TO-220-3
  • Manufacturer: Infineon Technologies
  • Market Status: Active

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