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Same model may have multiple batches, images only for reference.
IPP07N03LB G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP07N03LB G

Part No IPP07N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO-220
Datasheet
IPP07N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 2782pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1045966-IPP07N03LB G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP07N03LB G CAD Model

Description

The Infineon Technologies MOSFET is a high-performance electronic component designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 40μA
  • Max Gate Charge: 25nC @ 5V
  • Max Input Capacitance: 2782pF @ 15V
  • Maximum Rds On @ Id,Vgs: 6.6 mOhm @ 50A, 10V
  • Package: PG-TO220-3-1
  • Mounting: through-hole
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balance

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