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Same model may have multiple batches, images only for reference.
IPP084N06L3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP084N06L3GXKSA1

Part No IPP084N06L3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A TO-220-3
Datasheet
IPP084N06L3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 34μA
Max Gate Charge 29nC @ 4.5V
Max Input Capacitance 4900pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 104552-IPP084N06L3GXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP084N06L3GXKSA1 CAD Model

Description

The Infineon Technologies IPP084N06L3GXKSA1 is a MOSFET technology-based product that has a polarity of N-Channel.

  • Maximum Power Dissipation: 79W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Supply and Demand Status: Balanced
  • Maximum Rds On at Id, Vgs: 8.4 mOhm @ 50A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.2V @ 34μA
  • Package: PG-TO-220-3
  • Mounting: Through hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6768 $58.6880
85+ $1.3758 $116.9430
130+ $1.3329 $173.2770
180+ $1.2898 $232.1640
235+ $1.2469 $293.0215
310+ $1.1178 $346.5180
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