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Same model may have multiple batches, images only for reference.
IPP08CNE8NG Real Image
Same model may have multiple batches, images only for reference.

IPP08CNE8NG

Part No IPP08CNE8NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6690 pF @ 40 V
Power Dissipation (Max) 167W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Standard Package 315 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603611-IPP08CNE8NG
Ultra Librarian 3D Model Ultra Librarian IPP08CNE8NG CAD Model

Description

The 603611-IPP08CNE8NG is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS™
  • Designed for: High power applications
  • Drain to Source Voltage (Vdss): 85V
  • Continuous Drain Current (Id): 95A
  • Rds On (Max): 6.4mOhm @ 95A and 10V
  • Gate Charge (Qg): 99nC @ 10V
  • Package Type: Through hole
  • Suitable for: Power supplies, motor control, and inverters
  • Benefits: High power rating and reliable performance, efficient and stable operation in demanding environments

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