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Same model may have multiple batches, images only for reference.
IPP100N06S2L05AKSA2 Real Image
Same model may have multiple batches, images only for reference.

IPP100N06S2L05AKSA2

Part No IPP100N06S2L05AKSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 100A TO220-3
Datasheet
IPP100N06S2L05AKSA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 5660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 126376-IPP100N06S2L05AKSA2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP100N06S2L05AKSA2 CAD Model

Description

The Infineon Technologies MOSFET is a N-channel power MOSFET that is designed for use in various electronic applications.

  • Maximum Power Dissipation: 300W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Rds On: 4.7 mOhm @ 80A, 10V
  • Package: PG-TO220-3-1
  • Mounting: Through hole
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 5660pF @ 25V

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65+ $2.6901 $174.8565
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115+ $2.5165 $289.3975
154+ $2.2562 $347.4548
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