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Same model may have multiple batches, images only for reference.
IPP110N20N3 G Real Image
Same model may have multiple batches, images only for reference.

IPP110N20N3 G

Part No IPP110N20N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 88A TO220-3
Datasheet
IPP110N20N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 270μA
Gate Charge (Qg) (Maximum) @ Vgs 87nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7100pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 11 mOhm @ 88A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-3
Package TO-220-3
Win Source Part Number 776906-IPP110N20N3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP110N20N3 G CAD Model

Description

The Infineon Technologies OptiMOS series MOSFET with a TO-220-3 package is a high-performance N-channel MOSFET that can operate in a wide temperature range of -55°C to 175°C (TJ).

  • Continuous Drain Current: 88A (Tc)
  • Application: Discrete Semiconductor Products
  • Drive Voltage: 10V (max Rds On)
  • Drain-Source Voltage: 200V
  • Gate Charge: 87nC (maximum) @ 10V
  • Input Capacitance: 7100pF (maximum) @ 100V
  • Power Dissipation: 300W (maximum) @ Tc
  • Rds On: 11 mOhm (maximum) @ 88A and 10V
  • Supply and Demand Status: Limited

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