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Same model may have multiple batches, images only for reference.
IPP120P04P404AKSA1
Same model may have multiple batches, images only for reference.

IPP120P04P404AKSA1

Part No IPP120P04P404AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 120A TO220-3 / P-Channel 40 V 120A (Tc) 136W (Tc) Through Hole PG-TO220-3-1
Datasheet
IPP120P04P404AKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 340µA
Gate Charge (Qg) (Max) @ Vgs 205 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14790 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP120P
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000842278,INFINFIPP120P04P404AKSA1,2156-IPP120P04P404AKSA1
Standard Package 500
Win Source Part Number 989333-IPP120P04P404AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP120P04P404AKSA1 CAD Model

Description

The Infineon Technologies 989333-IPP120P04P404AKSA1 MOSFET is a P-channel device with a drain-source voltage of 40V and a continuous drain current of 120A @ 25°C.

  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
  • Package: TO-220-3 package
  • Input Capacitance (Ciss) (Max) @ Vds: 14790pF @ 25V
  • Applications: Suitable for use in a range of applications, including power management and consumer electronics

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