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IPP147N03LG Real Image IPP147N03LG real image
Same model may have multiple batches, images only for reference.
IPP147N03LG Real Image IPP147N03LG real image
IPP147N03LG Real Image IPP147N03LG real image
Same model may have multiple batches, images only for reference.

IPP147N03LG

Part No IPP147N03LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A TO-220-3
Datasheet
IPP147N03LG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 1000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 14.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069058-IPP147N03LG
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP147N03LG CAD Model

Description

The Infineon Technologies IPP147N03LG MOSFET transistor from is a popular choice for discrete semiconductor products.

  • Maximum Power Dissipation: 31W
  • Channel: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 20A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 10nC @ 10V
  • Status: Obsolete (EOL)
  • Popularity: High
  • Supply and Demand Status: Balance

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