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Same model may have multiple batches, images only for reference.
IPP200N25N3G Real Image
Same model may have multiple batches, images only for reference.

IPP200N25N3G

Part No IPP200N25N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 64A TO220-3
Datasheet
IPP200N25N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 270μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 7100pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 64A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 205242-IPP200N25N3G
Family Name IPP200N25N3
Introduction Date October 23, 2009
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP200N25N3G CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel semiconductor device with a drain-source breakdown voltage of 250V and a continuous drain current of 64A at 25°C.

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 64A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 270μA
  • Maximum Gate Charge: 86nC @ 10V
  • Maximum Input Capacitance: 7100pF @ 100V
  • Maximum Rds On at Id,Vgs: 20 mOhm @ 64A, 10V
  • Power Dissipation: 300W (Tc)
  • Package: PG-TO-220-3
  • Dimensions: TO-220-3

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41+ $2.4448 $100.2368
64+ $2.3684 $151.5776
88+ $2.2920 $201.6960
113+ $2.2156 $250.3628
152+ $1.9864 $301.9328
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