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Same model may have multiple batches, images only for reference.
IPP50R399CP Real Image
Same model may have multiple batches, images only for reference.

IPP50R399CP

Part No IPP50R399CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPP50R399 - 500V COOLMOS N-CHANN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 100 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603644-IPP50R399CP
Ultra Librarian 3D Model Ultra Librarian IPP50R399CP CAD Model

Description

The 603644-IPP50R399CP is an N-channel MOSFET transistor from Infineon Technologies.

  • Drain-to-Source Voltage (Vdss): 560V
  • Continuous Drain Current (Id): 9A @ 25°C
  • Rds On (Max): 399mOhm @ 4.9A and 10V
  • Gate Charge (Qg): 23nC @ 10V
  • Input Capacitance (Ciss): 890pF @ 100V
  • Operating Temperature: -55°C to 150°C
  • Mounting Type: through-hole
  • Package: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0949 $60.2195
130+ $0.8984 $116.7920
200+ $0.8703 $174.0600
275+ $0.8422 $231.6050
355+ $0.8142 $289.0410
475+ $0.7300 $346.7500
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Availability: 9,000 pieces
MOQ: 55 pcs
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