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IPP60R190E6

Part No IPP60R190E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20.2A TO220 / Trans MOSFET N-CH 650V 20.2A Automotive 3-Pin(3+Tab) TO-220 Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 630μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 151W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 089619-IPP60R190E6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IPP60R190E6
Introduction Date May 03, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IPP60R190E6 CAD Model

Description

The Infineon Technologies IPP60R190E6 MOSFET is a high-performance N-channel transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 20.2A @ 25°C
  • Package: PG-TO-220-3
  • Power Dissipation: 151W (Tc)
  • Drive Voltage: 10V
  • Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.5V @ 630μA
  • Gate Charge: 63nC @ 10V
  • Input Capacitance: 1400pF @ 100V
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.7406 $60.2932
52+ $2.2488 $116.9376
80+ $2.1785 $174.2800
110+ $2.1083 $231.9130
142+ $2.0379 $289.3818
190+ $1.8271 $347.1490
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Availability: 8,740 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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