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Same model may have multiple batches, images only for reference.
IPP60R190P6 Real Image
Same model may have multiple batches, images only for reference.

IPP60R190P6

Part No IPP60R190P6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Metal Oxide Semiconductor Field Effect Transistor
Datasheet
IPP60R190P6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS P6
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 630μ
Gate Charge (Qg) (Maximum) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1750pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 151W (Tc)
Rds On (Maximum) @ Id, Vgs 190 mOhm @ 7.6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-3
Package TO-220-3
Win Source Part Number 1186338-IPP60R190P6
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Family Name IPP60R190P6
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian IPP60R190P6 CAD Model

Description

The Infineon Technologies IPP60R190P6 is a CoolMOS P6 MOSFET with a maximum continuous drain current of 20.2A and a drain source voltage of 600V.

  • Maximum Continuous Drain Current: 20.2A
  • Drain Source Voltage: 600V
  • Rds On: 190 mOhm @ 7.6A, 10V
  • Input Capacitance: 1750pF @ 100V
  • Supply and Demand Status: Limited
  • Halogen-Free Compliant: Yes
  • Estimated EOL Date: 2026

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59+ $1.7218 $101.5862
90+ $1.6680 $150.1200
124+ $1.6142 $200.1608
161+ $1.5604 $251.2244
215+ $1.3990 $300.7850
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