The Infineon Technologies 040649-IPP65R190CFD is an N-channel MOSFET with a drain-source breakdown voltage of 650V and a maximum continuous drain current of 17.5A at 25°C.

• Maximum Rds On at Id, Vgs: 190 mOhm @ 7.3A and 10V
• Mounting: Through a hole
• Package: Tube/rail
• Power Dissipation: 151W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Part of: Discrete Semiconductor Products category
• Gate-Source Threshold Voltage: 4.5V @ 730μA
• Maximum Gate Charge: 68nC @ 10V
• Maximum Input Capacitance: 1850pF @ 100V
• Status: Active
• Temperature Range: -55°C to 150°C (TJ)
• Case/Package: PG-TO-220-3
• Supply and demand status: Balanced