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IPP65R280C6XKSA1

Part No IPP65R280C6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13.8A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 950pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1046016-IPP65R280C6XKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP65R280C6XKSA1 CAD Model

Description

The Infineon Technologies 1046016-IPP65R280C6XKSA1 MOSFET is a high-performance N-channel device designed for use in a wide range of electronic applications.

  • FET Type: N-Channel
  • Power Dissipation (Max): 104W
  • Voltage - Drain to Source Breakdown (Vdss): 650V
  • Vgs(th) (Max) @ Id: 3.5V @ 440μA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 950pF @ 100V
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V
  • Package / Case: PG-TO-220-3
  • Operating Temperature: -55°C ~ 150°C (TJ)

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