The Infineon Technologies IPP65R280E6 MOSFET is a through-hole mounting N-channel polarity device designed for use in discrete semiconductor products.

• Power Dissipation (Tc): 104W (Tc)
• Drive Voltage: 10V
• Operating Temperature: -55°C to 150°C (TJ)
• Drain-Source Breakdown Voltage: 650V
• Continuous Drain Current @ 25°C (Tc): 13.8A (Tc)
• Gate-Source Threshold Voltage: 3.5V @ 440μA
• Gate Charge (Max) @ 10V: 45nC @ 10V
• Input Capacitance (Max) @ 100V: 950pF @ 100V
• Rds On (Max) @ Id,Vgs: 280 mOhm @ 4.4A, 10V
• Package: PG-TO-220-3
• Dimension: TO-220-3