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Same model may have multiple batches, images only for reference.
IPP65R310CFD Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP65R310CFD

Part No IPP65R310CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11.4A TO220
Datasheet
IPP65R310CFD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 440μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 1100pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104.2W (Tc)
Maximum Rds On at Id,Vgs 310 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 141842-IPP65R310CFD
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP65R310CFD CAD Model

Description

The Infineon Technologies 141842-IPP65R310CFD is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 650V and a Continuous Drain Current of 11.4A (Tc) at 25°C.

  • Maximum Rds On: 310 mOhm @ 4.4A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO-220-3 case
  • Suitable for: Use in Discrete Semiconductor Products
  • Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation: 104.2W (Tc)
  • Supply and demand status: Limited

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Quantity Unit Price Ext. Price
3+ $21.8503 $65.5509
7+ $17.9291 $125.5037
10+ $17.3689 $173.6890
14+ $16.8087 $235.3218
18+ $16.2485 $292.4730
24+ $14.5669 $349.6056
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Availability: 5,800 pieces
MOQ: 3 pcs
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