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IPP65R380E6

Part No IPP65R380E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 700V 10.6A Automotive 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 650V 10.6A TO220
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 710pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1046019-IPP65R380E6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IPP65R380E6
Introduction Date August 16, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IPP65R380E6 CAD Model

Description

The IPP65R380E6 is a N-Channel MOSFET with a drain-source breakdown voltage of 650V and a maximum continuous drain current of 10.6A at 25°C.

  • FET Type: N-Channel
  • Voltage - Drain to Source Breakdown (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320μA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Package / Case: PG-TO-220-3
  • Supply and Demand Status: Limited
  • Production Date: August 16, 2010

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