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Same model may have multiple batches, images only for reference.
IPP65R380E6 Real Image
Same model may have multiple batches, images only for reference.

IPP65R380E6

Part No IPP65R380E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 700V 10.6A Automotive 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 650V 10.6A TO220
Datasheet
IPP65R380E6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 710pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1046019-IPP65R380E6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IPP65R380E6
Introduction Date August 16, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IPP65R380E6 CAD Model

Description

The IPP65R380E6 is a N-Channel MOSFET with a drain-source breakdown voltage of 650V and a maximum continuous drain current of 10.6A at 25°C.

  • FET Type: N-Channel
  • Voltage - Drain to Source Breakdown (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320μA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Package / Case: PG-TO-220-3
  • Supply and Demand Status: Limited
  • Production Date: August 16, 2010

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