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TSM80N08CZ C0G

Part No TSM80N08CZ C0G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 75V 80A TO220
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3905 pF @ 30 V
Power Dissipation (Max) 113.6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number TSM80
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 850245-TSM80N08CZ C0G
Ultra Librarian 3D Model Ultra Librarian TSM80N08CZ C0G CAD Model

Description

The TSM80N08CZ C0G is an N-channel MOSFET transistor with a drain-to-source voltage rating of 75V and a continuous drain current rating of 80A. TSM80N08CZ C0G is manufactured by Taiwan Semiconductor.

  • Channel Type: N-Channel
  • Drain-to-Source Voltage: 75V
  • Continuous Drain Current: 80A
  • On-Resistance: 8mOhm @ 40A
  • Gate-Source Threshold Voltage: 4V
  • Power Dissipation: 113.6W
  • Mounting Type: Through-Hole
  • Package Type: TO-220-3
  • Operating Temperature: -55°C to 150°C
  • Status: Obsolete

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