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Same model may have multiple batches, images only for reference.
IPP70N12S311AKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP70N12S311AKSA1

Part No IPP70N12S311AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL_100+ / N-Channel 120 V 70A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
Datasheet
IPP70N12S311AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4355 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP70N12
Standard Package 500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1065311-IPP70N12S311AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP70N12S311AKSA1 CAD Model

Description

The IPP70N12S311AKSA1 is a N-Channel MOSFET from Infineon Technologies.

  • Series: Automotive
  • Compliance: AEC-Q101 and OptiMOS™
  • Drain to Source Voltage (Vdss): 120V
  • Continuous Drain Current (Id): 70A @ 25°C
  • Maximum On-Resistance (Rds On): 11.6mOhm @ 70A and 10V gate-source voltage (Vgs)
  • Gate Charge (Qg): 65nC @ 10V
  • Input Capacitance (Ciss): 4355pF @ 25V drain-source voltage (Vds)
  • Operating Temperature Range: -55°C to 175°C
  • Package: Through-hole TO-220-3
  • Maximum Power Dissipation: 125W
  • Standard Package: 500 pcs

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