The Infineon Technologies IPP80N04S2L03AKSA1 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

• Packaging: tube/rail
• Mounting: through-hole
• Technology: MOSFET
• Polarity: N-channel
• Power Dissipation (Max): 300W (Tc)
• Categories: discrete semiconductor products
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Status: obsolete (EOL)
• Temperature Range - Operating: -55°C to 175°C (TJ)
• Case/Package: PG-TO220-3-1, TO-220-3
• Dimension: TO-220-3
• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current @ 25°C: 80A (Tc)
• Gate-Source Threshold Voltage: 2V @ 250μA
• Max Gate Charge: 213nC @ 10V
• Max Input Capacitance: 6000pF @ 25V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id, Vgs: 3.4 mOhm @ 80A, 10V
• Supply and Demand Status: balance
• Quantity per Package: 500