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Same model may have multiple batches, images only for reference.
IPP80N06S205AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP80N06S205AKSA1

Part No IPP80N06S205AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO220-3
Datasheet
IPP80N06S205AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 5110pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.1 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046036-IPP80N06S205AKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP80N06S205AKSA1 CAD Model

Description

The Infineon Technologies IPP80N06S205AKSA1 is a MOSFET technology N-channel polarity power transistor.

  • FET Type: N-Channel
  • Mounting Type: Through Hole
  • Power Dissipation (Max) @ Tc: 300 W
  • Voltage - Drain to Source Breakdown (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 80A, 10V
  • Gate-Source Voltage: ±20V
  • Input Capacitance (Ciss) @ Vds: 5110 pF @ 25 V
  • Package / Case: PG-TO220-3-1
  • Lifecycle Status: Obsolete (EOL)

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