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IPP80N06S2L-07

Part No IPP80N06S2L-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 150μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 3160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 210W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 069081-IPP80N06S2L-07
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Lighting, Industrial
Ultra Librarian 3D Model Ultra Librarian IPP80N06S2L-07 CAD Model

Description

The Infineon Technologies IPP80N06S2L-07 is an N-channel MOSFET with a maximum power dissipation of 210W (Tc).

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 150μA
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: PG-TO220-3-1
  • Product Type: Discrete semiconductor
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Commonly used in: Lighting and industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8768 $65.6880
80+ $1.5400 $123.2000
120+ $1.4918 $179.0160
160+ $1.4438 $231.0080
210+ $1.3956 $293.0760
280+ $1.2513 $350.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,400 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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