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IPP80N06S2L06AKSA1

Part No IPP80N06S2L06AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO220-3  /  N-Channel 55 V 80A (Tc) 250W (Tc) Through Hole PG-TO220-3-1
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 69A, 10V
Vgs(th) (Max) @ Id 2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP80N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPP80N06S2L-06,IPP80N06S2L-06-ND,2156-IPP80N06S2L06AKSA1-IT,SP000218824,INFINFIPP80N06S2L06AKSA1
Standard Package 500
Win Source Part Number 1041088-IPP80N06S2L06AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP80N06S2L06AKSA1 CAD Model

Description

The IPP80N06S2L06AKSA1 is an N-channel MOSFET transistor from Infineon Technologies that is designed for use in various electronic applications.

  • Product Status: Obsolete
  • Series: OptiMOS™
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Drive Voltage: 4.5V and 10V
  • Operating Temperature: -55°C to 175°C
  • Power Dissipation: 250W (Maximum)
  • Gate-Source Voltage: ±20V
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A @ 25°C
  • Gate Charge: 150nC @ 10V
  • Input Capacitance: 3800pF @ 25V

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