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Same model may have multiple batches, images only for reference.
IPP80N06S3-05 Real Image
Same model may have multiple batches, images only for reference.

IPP80N06S3-05

Part No IPP80N06S3-05
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220
Datasheet
IPP80N06S3-05 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 110μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 10760pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 165W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 63A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046037-IPP80N06S3-05
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP80N06S3-05 CAD Model

Description

The Infineon Technologies IPP80N06S3-05 is a MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 165W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 80A
  • Maximum Rds On @ Id,Vgs: 5.4 mOhm @ 63A, 10V
  • Gate-Source Threshold Voltage: 4V @ 110μA
  • Maximum Gate Charge: 240nC @ 10V
  • Maximum Input Capacitance: 10760pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Technology: N-Channel
  • Mounting: through hole
  • Packaging: tube/rail
  • Case / Package: PG-TO220-3-1
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balance

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