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Same model may have multiple batches, images only for reference.
IPP80N06S3-07 Real Image
Same model may have multiple batches, images only for reference.

IPP80N06S3-07

Part No IPP80N06S3-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220
Datasheet
IPP80N06S3-07 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 80μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 7768pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 135W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 51A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046038-IPP80N06S3-07
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian IPP80N06S3-07 CAD Model

Description

The Infineon Technologies IPP80N06S3-07 is a N-Channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 80A at 25°C.

  • Maximum Power Dissipation: 135W (Tc)
  • Maximum Rds On: 6.8 mOhm @ 51A, 10V
  • Gate-Source Threshold Voltage: 4V @ 80μA
  • Maximum Gate Charge: 170nC @ 10V
  • Maximum Input Capacitance: 7768pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Case/Package: PG-TO220-3-1
  • Suitable for: use in various applications in the Discrete Semiconductor Products category, especially in the Industrial field.

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