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IPP80N06S3L-08

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Part No	IPP80N06S3L-08
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 55V 80A TO-220 / Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220AB
Datasheet	IPP80N06S3L-08 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Series	OptiMOS
Packaging	Tube
Part Status	Obsolete(EOL)
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	55V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Vgs(th) (Maximum) @ Id	2.2V @ 55μA
Gate Charge (Qg) (Maximum) @ Vgs	134nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	6475pF @ 25V
Vgs (Maximum)	±16V
Power Dissipation (Maximum)	105W (Tc)
Rds On (Maximum) @ Id, Vgs	7.9 mOhm @ 43A, 10V
Operating Temperature Range	-55°C ~ 175°C (TJ)
Mounting Style	Through Hole
Manufacturer Package	PG-TO220-3-1
Package	TO-220-3
Win Source Part Number	776920-IPP80N06S3L-08
Popularity	Medium
Supply and Demand Status	Limited
Family Name	IPP80N06S3L-08
Introduction Date	September 16, 2005
ECCN	EAR99
Country of Origin	Malaysia
Halogen Free	Compliant
Estimated EOL Date	Obsolete / End of life
Ultra Librarian 3D Model	Ultra Librarian IPP80N06S3L-08 CAD Model

Alternative Products

Description

The Infineon Technologies IPP80N06S3L-08 is an OptiMOS MOSFET transistor that has a maximum continuous drain current of 80A @ 25°C and a maximum drain-source voltage of 55V.

Continuous Drain Current: 80A @ 25°C
Maximum Drain-Source Voltage: 55V
Gate-Source Threshold Voltage: 2.2V @ 55μA
Gate Charge: 134nC @ 10V
Input Capacitance: 6475pF @ 25V
Maximum Power Dissipation: 105W @ Tc
Rds on: 7.9 mOhm @ 43A, 10V
Package: TO-220-3
Mounting: Through-hole
Applications: Discrete semiconductor products
ECCN: EAR99
Estimated EOL date: Obsolete / end of life

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