The Infineon Technologies IPP90R800C3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a drain-source breakdown voltage of 900V and a continuous drain current of 6.9A (Tc).

• Drain-Source Breakdown Voltage: 900V
• Continuous Drain Current: 6.9A (Tc)
• Maximum Power Dissipation: 104W (Tc)
• Mounting Type: Through Hole
• Case: PG-TO220-3-1
• Gate-Source Threshold Voltage: 3.5V @ 460μA
• Maximum Rds On @ Id,Vgs: 800 mOhm @ 4.1A, 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 42nC @ 10V