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Same model may have multiple batches, images only for reference.
IPS135N03LG Infineon Technologies
Same model may have multiple batches, images only for reference.

IPS135N03LG

Part No IPS135N03LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A TO251-3
Datasheet
IPS135N03LG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 1000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 069097-IPS135N03LG
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPS135N03LG CAD Model

Description

The Infineon Technologies 069097-IPS135N03LG MOSFET is a high-power N-channel device that can handle up to 30A with a low on-resistance of 13.5mΩ @ 30A and 10V gate-source voltage.

  • Package: PG-TO251-3
  • Maximum Power Dissipation: 31W @ Tc
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Applications: Power supplies, motor control, and lighting systems.
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
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Availability: 42,450 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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