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Same model may have multiple batches, images only for reference.
IPT210N25NFDATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPT210N25NFDATMA1

Part No IPT210N25NFDATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MV POWER MOS
Datasheet
IPT210N25NFDATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 69A, 10V
Vgs(th) (Max) @ Id 4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 125 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
Base Product Number IPT210
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874885-IPT210N25NFDATMA1
Ultra Librarian 3D Model Ultra Librarian IPT210N25NFDATMA1 CAD Model

Description

The IPT210N25NFDATMA1 is a N-Channel MOSFET transistor from the OptiMOS™ 3 series by Infineon Technologies.

  • Vdss: 250 V
  • Id: 69A @ 25°C
  • Rds On (Max): 21mOhm @ 69A and 10V
  • Qg: 86 nC @ 10V
  • Ciss: 7000 pF @ 125V
  • Mounting: Surface mountable
  • Package: 8-PowerSFN
  • Operating Temperature: -55°C to 175°C
  • Power Dissipation: 375W

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Quantity Unit Price Ext. Price
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18+ $6.5197 $117.3546
28+ $6.3160 $176.8480
38+ $6.1123 $232.2674
49+ $5.9085 $289.5165
66+ $5.2973 $349.6218
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