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Same model may have multiple batches, images only for reference.
IPW60R125CP Infineon Technologies
Same model may have multiple batches, images only for reference.

IPW60R125CP

Part No IPW60R125CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 25A TO-247
Datasheet
IPW60R125CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.1mA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2500pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069119-IPW60R125CP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPW60R125CP CAD Model

Description

The Infineon Technologies IPW60R125CP is a N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Power Dissipation: 208W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 25A (Tc) @ 25°C
  • Maximum Rds On: 125 mOhm @ 16A, 10V
  • Gate-Source Threshold Voltage: 3.5V @ 1.1mA
  • Maximum Gate Charge: 70nC @ 10V
  • Maximum Input Capacitance: 2500pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO247-3
  • Mounting: through hole

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Quantity Unit Price Ext. Price
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21+ $5.6745 $119.1645
32+ $5.4973 $175.9136
44+ $5.3199 $234.0756
57+ $5.1425 $293.1225
76+ $4.6105 $350.3980
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Availability: 20,112 pieces
MOQ: 9 pcs
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