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IPW60R199CP

Part No IPW60R199CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 16A TO-247 / Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) TO-247 Tube
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 660μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1520pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 139W (Tc)
Maximum Rds On at Id,Vgs 199 mOhm @ 9.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069122-IPW60R199CP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IPW60R199CP
Introduction Date August 30, 2005
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IPW60R199CP CAD Model

Description

The IPW60R199CP is a N-Channel MOSFET transistor, manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 16A (Tc)
  • Maximum Rds On: 199 mOhm @ 9.9A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 43nC @ 10V
  • Popularity: high
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0675 $62.0250
70+ $1.6967 $118.7690
110+ $1.6436 $180.7960
150+ $1.5904 $238.5600
190+ $1.5373 $292.0870
255+ $1.3791 $351.6705
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,100 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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