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IPW65R110CFDFKSA1

Part No IPW65R110CFDFKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 31.2A TO247-3 / N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V
Power Dissipation (Max) 277.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package / Case TO-247-3
Base Product Number IPW65R110
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPW65R110CFD-ND,IPW65R110CFD,SP000895232
Standard Package 30
Win Source Part Number 982743-IPW65R110CFDFKSA1
Ultra Librarian 3D Model Ultra Librarian IPW65R110CFDFKSA1 CAD Model

Description

The Infineon Technologies IPW65R110CFDFKSA1 is a high-performance MOSFET transistor designed for use in a wide range of electronic circuits.

  • Maximum Voltage Rating: 650 volts
  • Maximum Current Rating: 31.2 amps

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.0122 $60.1220
24+ $4.9332 $118.3968
37+ $4.7791 $176.8267
50+ $4.6249 $231.2450
65+ $4.4707 $290.5955
87+ $4.0082 $348.7134
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,120 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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