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Same model may have multiple batches, images only for reference.
IPW65R280E6 Real Image
Same model may have multiple batches, images only for reference.

IPW65R280E6

Part No IPW65R280E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13.8A TO247
Datasheet
IPW65R280E6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 950pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 1046116-IPW65R280E6
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPW65R280E6 CAD Model

Description

The Infineon Technologies IPW65R280E6 is an N-Channel MOSFET designed for use in high-performance power conversion applications.

  • FET Type: N-Channel
  • Power Dissipation (Max) @ Tc: 104 W
  • Voltage - Drain to Source Breakdown (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
  • Vgs(th) (Max) @ Id: 3.5V @ 440μA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) @ Vds: 950 pF @ 100 V
  • Package / Case: PG-TO247-3

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175+ $1.6517 $289.0475
235+ $1.4807 $347.9645
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