The IPW65R660CFD is a CoolMOS™ CFD7A series power MOSFET from Infineon Technologies. It is specifically designed for applications requiring high efficiency and robust performance in resonant switching topologies. This MOSFET is particularly well-suited for use in LLC converters and phase-shifted full-bridge (PSFB) converters.

Applications

• LLC Converters: High-efficiency power supplies for servers and telecom equipment.
• Phase-Shifted Full-Bridge (PSFB) Converters: Used in industrial power supplies and UPS systems.
• High-Frequency Welding: Powering high-frequency welding equipment.
• Induction Heating: Driving induction heating systems.
• Solar Inverters: Optimizing efficiency in solar power conversion.

Features

• CoolMOS™ CFD7A Technology: Offers optimized performance for resonant switching topologies.
• Fast Body Diode: Enables efficient operation in resonant circuits.
• Low On-State Resistance (RDS(on)): Minimizes conduction losses.
• Optimized Gate Charge (Qg): Reduces switching losses and improves efficiency.
• Integrated Gate Resistor: Simplifies gate drive design and reduces EMI.

Benefits

• Increased System Efficiency: Optimized for resonant switching, reducing overall power losses.
• Improved Reliability: Fast body diode enhances robustness and reliability.
• Simplified Design: Integrated gate resistor simplifies gate drive circuitry.
• Reduced EMI: Integrated gate resistor helps to dampen ringing and reduce electromagnetic interference.
• Higher Power Density: Allows for more compact and efficient power supply designs.

Additional Details

The IPW65R660CFD features a breakdown voltage of 650V and a typical on-state resistance of 0.66 Ohms. It is available in a PG-TO247 package. The CoolMOS™ CFD7A technology implemented in this MOSFET provides significant improvements in performance for resonant switching applications. The fast body diode is crucial for efficient operation in these topologies, enabling soft switching and reducing switching losses. The integrated gate resistor simplifies gate drive design and helps to dampen ringing, reducing EMI. The IPW65R660CFD is designed to meet the stringent requirements of modern power electronics systems, providing a high-performance and cost-effective solution. Its robust design and excellent performance characteristics make it an ideal choice for applications where efficiency and reliability are paramount. The device's optimized gate charge also contributes to reduced switching losses and improved overall system efficiency. Furthermore, its ability to operate at high switching frequencies enables the use of smaller and less expensive passive components, leading to further cost savings. The IPW65R660CFD is designed for easy implementation, simplifying the design process and reducing time-to-market.