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Same model may have multiple batches, images only for reference.
IRF1010ZLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF1010ZLPBF

Part No IRF1010ZLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-262
Datasheet
IRF1010ZLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046393-IRF1010ZLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1010ZLPBF CAD Model

Description

The IRF1010ZLPBF is an N-channel MOSFET technology-based power transistor.

  • Maximum Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 75A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 7.5 mOhm @ 75A, 10V
  • Package: TO-262
  • Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Lifecycle Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7295 $60.5325
85+ $1.4192 $120.6320
130+ $1.3748 $178.7240
175+ $1.3305 $232.8375
225+ $1.2861 $289.3725
305+ $1.1531 $351.6955
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,900 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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