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Same model may have multiple batches, images only for reference.
IRF1018ESPBF Real Image
Same model may have multiple batches, images only for reference.

IRF1018ESPBF

Part No IRF1018ESPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 79A D2PAK
Datasheet
IRF1018ESPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 2290pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 47A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046394-IRF1018ESPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF1018ESPBF CAD Model

Description

The Infineon Technologies IRF1018ESPBF is a N-Channel MOSFET transistor used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 79A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Gate Charge: 69nC @ 10V
  • Maximum Input Capacitance: 2290pF @ 50V
  • Maximum Rds On @ Id,Vgs: 8.4 mOhm @ 47A, 10V
  • Power Dissipation: 110W (Tc)
  • Mounting Technology: SMD (SMT)
  • Status: Not for new designs
  • Packaging: D2PAK

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2535 $50.1400
100+ $1.0286 $102.8600
155+ $0.9964 $154.4420
210+ $0.9643 $202.5030
270+ $0.9321 $251.6670
360+ $0.8357 $300.8520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,890 pieces
MOQ: 40 pcs
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