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Same model may have multiple batches, images only for reference.
IRF1310NL Real Image
Same model may have multiple batches, images only for reference.

IRF1310NL

Part No IRF1310NL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 42A TO-262
Datasheet
IRF1310NL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 160W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046398-IRF1310NL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1310NL CAD Model

Description

Infineon Technologies IRF1310NL is a MOSFET transistor with an N-channel polarity.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Rds On (Max) @ Id,Vgs: 36 mOhm @ 22A, 10V
  • Package: TO-262
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Quantity Unit Price Ext. Price
8+ $7.5604 $60.4832
19+ $6.2034 $117.8646
29+ $6.0095 $174.2755
40+ $5.8157 $232.6280
52+ $5.6218 $292.3336
69+ $5.0402 $347.7738
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Availability: 12,700 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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