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Same model may have multiple batches, images only for reference.
IRF224 Real Image
Same model may have multiple batches, images only for reference.

IRF224

Part No IRF224
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL HERMETIC MOS HEXFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 3.8A
Power Dissipation (Max) 40W
Mounting Type Through Hole
Supplier Device Package TO-204AA (TO-3)
Package / Case TO-204AA, TO-3
Standard Package 129 pcs
MSL Level 3 (168 Hours)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 159429-IRF224
Ultra Librarian 3D Model Ultra Librarian IRF224 CAD Model

Description

The IRF224 is a high-performance N-Channel MOSFET transistor designed for various applications in the electronics industry.

  • Drain to Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 3.8A
  • Mounting Type: through-hole
  • Suitable for: applications that require high power and voltage levels, such as power amplifiers and motor control circuits
  • Manufacturer: Infineon Technologies

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