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Same model may have multiple batches, images only for reference.
IRF2807S Real Image
Same model may have multiple batches, images only for reference.

IRF2807S

Part No IRF2807S
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 75V 82A D2PAK
Datasheet
IRF2807S Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 82A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 13mOhm at 43A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 160nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3820pF at 25V
Power Dissipation (Maximum) 230W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186940-IRF2807S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF2807S CAD Model

Description

The Infineon Technologies 1186940-IRF2807S is an N-channel MOSFET transistor with a drain-source breakdown voltage of 75V and a continuous drain current of 82A.

  • Manufacturer: Infineon Technologies
  • Product Name: 1186940-IRF2807S
  • Type: N-channel MOSFET transistor
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 82A
  • Package: TO-263-3, D2Pak
  • Power Dissipation: 230W
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 3820pF @ 25V
  • Status: Obsolete
  • Supply and Demand Status: Limited
  • Application: Applications where high current and voltage are required

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