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Same model may have multiple batches, images only for reference.
IRF630NPBF
Same model may have multiple batches, images only for reference.

IRF630NPBF

Part No IRF630NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.3A TO-220AB / Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
Datasheet
IRF630NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 575pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 82W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 5.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017450-IRF630NPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF630
Introduction Date March 01, 2004
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF630NPBF CAD Model

Description

The Infineon Technologies IRF630NPBF is a N-Channel MOSFET discrete semiconductor product with a maximum power dissipation of 82W (Tc) and a drain-source breakdown voltage of 200V.

  • Supply and Demand Status: Balanced
  • Status: Active part
  • Market Usage: Commonly used

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2399 $50.3790
510+ $0.1969 $100.4190
790+ $0.1907 $150.6530
1,085+ $0.1846 $200.2910
1,405+ $0.1784 $250.6520
1,875+ $0.1600 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100,050 pieces
MOQ: 210 pcs
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