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Same model may have multiple batches, images only for reference.
IRF2807STRLPBF
Same model may have multiple batches, images only for reference.

IRF2807STRLPBF

Part No IRF2807STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 82A D2PAK
Datasheet
IRF2807STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 3820pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 134357-IRF2807STRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF2807STRLPBF CAD Model

Description

The Infineon Technologies IRF2807STRLPBF is a high-performance MOSFET that is designed for use in a range of electronic devices.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 82A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Power Dissipation: 230W (Tc)
  • Feature: reliable and long-lasting
  • Benefit: easy to install and use, making it a popular choice for many engineers and designers

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