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IRF3007PBF
Same model may have multiple batches, images only for reference.

IRF3007PBF

Part No IRF3007PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A TO-220AB
Datasheet
IRF3007PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 3270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 12.6 mOhm @ 48A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069261-IRF3007PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3007PBF CAD Model

Description

The Infineon Technologies IRF3007PBF is a N-Channel MOSFET that is commonly used in power management.

  • Maximum Power Dissipation: 200W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 12.6 mOhm @ 48A, 10V
  • Supply and Demand Status: limited

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63+ $2.7002 $170.1126
86+ $2.6131 $224.7266
111+ $2.5260 $280.3860
149+ $2.2646 $337.4254
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Availability: 15,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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