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IRF300P226 Real Image
Same model may have multiple batches, images only for reference.

IRF300P226

Part No IRF300P226
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 100A TO247AC  /  N-Channel 300 V 100A (Tc) 556W (Tc) Through Hole TO-247AC
Datasheet
IRF300P226 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series StrongIRFET™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 191 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10030 pF @ 50 V
Power Dissipation (Max) 556W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number IRF300
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001582442
Standard Package 25
Win Source Part Number 1018876-IRF300P226
Ultra Librarian 3D Model Ultra Librarian IRF300P226 CAD Model

Description

The IRF300P226 is a N-Channel MOSFET transistor that belongs to Infineon Technologies' StrongIRFET™ series.

  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max): 19mOhm @ 45A, 10V
  • Vgs(th) (Max): 4V @ 270μA
  • Package: TO-247-3
  • Gate Charge (Qg) (Max): 191 nC @ 10 V

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