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Same model may have multiple batches, images only for reference.
IRF3704ZCSTRR
Same model may have multiple batches, images only for reference.

IRF3704ZCSTRR

Part No IRF3704ZCSTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 67A D2PAK
Datasheet
IRF3704ZCSTRR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 1220pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 7.9 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 069269-IRF3704ZCSTRR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3704ZCSTRR CAD Model

Description

The Infineon Technologies IRF3704ZCSTRR is an N-Channel MOSFET that comes in a D2PAK case/package.

  • Power Dissipation: 57W (Tc)
  • Continuous Drain Current: 67A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Gate Charge: 13nC @ 4.5V
  • Maximum Rds On: 7.9 mOhm @ 21A and 10V
  • Perfect for: discrete semiconductor products
  • Temperature Range: -55°C to 175°C (TJ)
  • Packaging: Reel - TR
  • Supply and Demand: limited

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